LMNBSS139JZF Key Features
- RDS(ON)=2.5Ω@VGS=4.5V
- RDS(ON)=4Ω@VGS=2.5V
- Improved dv/dt capability
- Fast switching
- ESD Protected: 1500V
- Part: LMNBSS139JZF
- Manufacturer: LFC semi
- Size: 533.69 KB
Related LFC semi Datasheets
| Part Number | Description |
|---|---|
| LMNBSS139K | 60V N-Channel MOSFET |
| LMNBSS139TFF | 60V N-Channel MOSFET |
| LMNBSS139W | 60V N-Channel MOSFET |
| LMNBSS123 | 100V N-Channel Enhancement Mode MOSFET |
| LMN02N15TSF | 150V N-Channel MOSFET |
LMNBSS139JZF Description
The N-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Applications Notebook Load Switch LED applications LMNBSS139JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain...