LMNN3218SF Datasheet PDF (30V Dual N-Channel MOSFET)

LMNN3218SF - 30V Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

30V, 7.3A, RDS(ON)=22mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.
SOP-8 package design Product.

Datasheet Details

Part number	LMNN3218SF
Manufacturer	LFC semi
File Size	850.26 KB
Description	30V Dual N-Channel MOSFET
Datasheet	LMNN3218SF Datasheet
Additional preview pages of the LMNN3218SF datasheet.

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Full PDF Text Transcription

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LMNN3218SF Rev. 1.0 LMNN3218SF 30V Dual N-Channel MOSFETs Features  30V, 7.3A, RDS(ON)=22mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  SOP-8 package design Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Jul 15, 2025 |