LMNN3218SF Key Features
- 30V, 7.3A, RDS(ON)=22mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- SOP-8 package design
- Part: LMNN3218SF
- Manufacturer: LFC semi
- Size: 850.26 KB
Related LFC semi Datasheets
| Part Number | Description |
|---|---|
| LMNN7002KY | Dual N-Channel Enhancement Mode MOSFET |
| LMNNBSS139T | Dual N-Channel Enhancement Mode MOSFET |
| LMN02N15TSF | 150V N-Channel MOSFET |
| LMN0910P | 100V N-Channel MOSFET |
| LMN1072KAF | 20V N-Channel Enhancement Mode MOSFET |
LMNN3218SF Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.