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LMNN3218SF - 30V Dual N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 30V, 7.3A, RDS(ON)=22mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOP-8 package design Product.

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Datasheet Details

Part number LMNN3218SF
Manufacturer LFC semi
File Size 850.26 KB
Description 30V Dual N-Channel MOSFET
Datasheet download datasheet LMNN3218SF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNN3218SF Rev. 1.0 LMNN3218SF 30V Dual N-Channel MOSFETs Features  30V, 7.3A, RDS(ON)=22mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  SOP-8 package design Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.