LMNN7002KY Key Features
- 60V/0.5A, RDS(ON)=3.0Ω@VGS=10V
- 60V/0.2A, RDS(ON)=4.0Ω@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-563 package design
- Part: LMNN7002KY
- Manufacturer: LFC semi
- Size: 714.24 KB
Related LFC semi Datasheets
| Part Number | Description |
|---|---|
| LMNN3218SF | 30V Dual N-Channel MOSFET |
| LMNNBSS139T | Dual N-Channel Enhancement Mode MOSFET |
| LMN02N15TSF | 150V N-Channel MOSFET |
| LMN0910P | 100V N-Channel MOSFET |
| LMN1072KAF | 20V N-Channel Enhancement Mode MOSFET |
LMNN7002KY Description
The LMNN7002KY is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.