LMNNBSS139T Key Features
- 60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V
- Improved dv/dt Capability
- Fast Switching
- Green Device Available
- SOT-363 Package Design
- ESD Protected : 1500V
- Part: LMNNBSS139T
- Manufacturer: LFC semi
- Size: 668.76 KB
Related LFC semi Datasheets
| Part Number | Description |
|---|---|
| LMNN3218SF | 30V Dual N-Channel MOSFET |
| LMNN7002KY | Dual N-Channel Enhancement Mode MOSFET |
| LMN02N15TSF | 150V N-Channel MOSFET |
| LMN0910P | 100V N-Channel MOSFET |
| LMN1072KAF | 20V N-Channel Enhancement Mode MOSFET |
LMNNBSS139T Description
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and mutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications.