LMNNBSS139T - Dual N-Channel Enhancement Mode MOSFET

General Description

DMOS Technology.

Key Features

60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V.
Improved dv/dt Capability.
Fast Switching.
Green Device Available.
SOT-363 Package Design.
ESD Protected : 1500V Product.

LMNNBSS139T dual n-channel enhancement mode mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMNNBSS139T
Manufacturer	LFC semi
File Size	668.76 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	LMNNBSS139T Datasheet

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Full PDF Text Transcription (Reference)

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LMNNBSS139T Rev. 1.0 LMNNBSS139T Dual N-Channel Enhancement Mode MOSFET Features  60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V  Improved dv/dt Capability  Fast Switching  Green Device Available  SOT-363 Package Design  ESD Protected : 1500V Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications.