LMNNBSS139T
Features
- 60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V
- Improved dv/dt Capability
- Fast Switching
- Green Device Available
- SOT-363 Package Design
- ESD Protected : 1500V
Product Description
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench
DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and mutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications.
Applications
- Notebook
- Load Switch
- LED Applications
Pin Configuration
LMNNBSS139TX6F (SOT-363)
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Ordering Information
Part Number
Pb Free
P/N code code
LMNNBSS139TX6F LMNNBSS139T...
