Datasheet4U Logo Datasheet4U.com

LMNNBSS139T - Dual N-Channel Enhancement Mode MOSFET

Description

DMOS Technology.

Features

  • 60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V.
  • Improved dv/dt Capability.
  • Fast Switching.
  • Green Device Available.
  • SOT-363 Package Design.
  • ESD Protected : 1500V Product.

📥 Download Datasheet

Datasheet preview – LMNNBSS139T

Datasheet Details

Part number LMNNBSS139T
Manufacturer LFC semi
File Size 668.76 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMNNBSS139T Datasheet
Additional preview pages of the LMNNBSS139T datasheet.

📁 Similar Datasheet

  • LMN1A - SILICON RECTIFIER DIODES (EIC)
  • LMN1B - SILICON RECTIFIER DIODES (EIC)
  • LMN1D - SILICON RECTIFIER DIODES (EIC)
  • LMN1G - SILICON RECTIFIER DIODES (EIC)
  • LMN1J - SILICON RECTIFIER DIODES (EIC)
  • LMN1K - SILICON RECTIFIER DIODES (EIC)
  • LMN1M - SILICON RECTIFIER DIODES (EIC)
  • LMN200B01 - 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET (DIODES)
  • LMN200B02 - 200mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET (DIODES)
  • LMN400B01 - 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET (DIODES)
Other Datasheets by LFC semi

Full PDF Text Transcription

Click to expand full text
LMNNBSS139T Rev. 1.0 LMNNBSS139T Dual N-Channel Enhancement Mode MOSFET Features  60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V  Improved dv/dt Capability  Fast Switching  Green Device Available  SOT-363 Package Design  ESD Protected : 1500V Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications.
Published: |