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LMNP2062RF - 20V N+P Dual Channel MOSFET

General Description

MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • N-Channel.
  • 20V/4.0A, RDS(ON)=30mΩ@VGS=4.5V.
  • 20V/3.0A, RDS(ON)=30mΩ@VGS=2.5V.
  • P-Channel.
  • -20V/-3.0A, RDS(ON)=65mΩ@VGS=-4.5V.
  • -20V/-2.4A, RDS(ON)=85mΩ@VGS=-2.5V.
  • Low On Resistance.
  • Low Gate Charge.
  • Fast switching speed.
  • SOT-23-6L package design Product.

📥 Download Datasheet

Datasheet Details

Part number LMNP2062RF
Manufacturer LFC semi
File Size 900.98 KB
Description 20V N+P Dual Channel MOSFET
Datasheet download datasheet LMNP2062RF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNP2062RF Rev. 1.0 LMNP2062RF 20V N+P Dual Channel MOSFETs Features  N-Channel  20V/4.0A, RDS(ON)=30mΩ@VGS=4.5V  20V/3.0A, RDS(ON)=30mΩ@VGS=2.5V  P-Channel  -20V/-3.0A, RDS(ON)=65mΩ@VGS=-4.5V  -20V/-2.4A, RDS(ON)=85mΩ@VGS=-2.5V  Low On Resistance  Low Gate Charge  Fast switching speed  SOT-23-6L package design Product Description LMNP2062RF, N&P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.