LMNP2093EX6F
Features
- N-Channel
- 20V/0.5A, RDS(ON)=450mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=600mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=750mΩ@VGS=1.8V
- P-Channel
- -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V
- -20V/-0.2A, RDS(ON)=1050mΩ@VGS=-2.5V
- -20V/-0.1A, RDS(ON)=1500mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-363 package design
Product Description
LMNP2093E is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Load Switch for Portable Devices, Smart
Phones, Pagers.
Pin Configuration
LMNP2093EX6F (SOT-363)
Pin
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
Notice: The information in this...
