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LMNP2093EX6F - N & P Pair Enhancement Mode MOSFET

General Description

LMNP2093E is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • N-Channel.
  • 20V/0.5A, RDS(ON)=450mΩ@VGS=4.5V.
  • 20V/0.4A, RDS(ON)=600mΩ@VGS=2.5V.
  • 20V/0.2A, RDS(ON)=750mΩ@VGS=1.8V.
  • P-Channel.
  • -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V.
  • -20V/-0.2A, RDS(ON)=1050mΩ@VGS=-2.5V.
  • -20V/-0.1A, RDS(ON)=1500mΩ@VGS=-1.8V.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-363 package design Product.

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Datasheet Details

Part number LMNP2093EX6F
Manufacturer LFC semi
File Size 811.14 KB
Description N & P Pair Enhancement Mode MOSFET
Datasheet download datasheet LMNP2093EX6F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNP2093EX6F Rev. 1.0 LMNP2093EX6F N & P Pair Enhancement Mode MOSFET Features  N-Channel  20V/0.5A, RDS(ON)=450mΩ@VGS=4.5V  20V/0.4A, RDS(ON)=600mΩ@VGS=2.5V  20V/0.2A, RDS(ON)=750mΩ@VGS=1.8V  P-Channel  -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1050mΩ@VGS=-2.5V  -20V/-0.1A, RDS(ON)=1500mΩ@VGS=-1.8V  Low-Voltage Operation  High-Speed Circuits  Low Battery Voltage Operation  SOT-363 package design Product Description LMNP2093E is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.