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LMP3335SF - 30V P-Channel Enhancement Mode MOSFET

Description

The P-Channel enhancement mode power field effect transistor is using trench DMOS technology.

Motor Driver Applications POL Applications Load Switch LED Application P

Features

  • RDS(ON)=5mΩ@VGS=-10V.
  • RDS(ON)=7.8mΩ@VGS=-4.5V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – LMP3335SF

Datasheet Details

Part number LMP3335SF
Manufacturer LFC semi
File Size 760.67 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMP3335SF Datasheet
Additional preview pages of the LMP3335SF datasheet.

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Full PDF Text Transcription

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LMP3335SF Rev. 1.0 LMP3335SF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=5mΩ@VGS=-10V  RDS(ON)=7.8mΩ@VGS=-4.5V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficiency fast switching applications. Product Description The P-Channel enhancement mode power field effect transistor is using trench DMOS technology.
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