LMP3335SF
Features
- RDS(ON)=5mΩ@VGS=-10V
- RDS(ON)=7.8mΩ@VGS=-4.5V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- Green Device Available superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. This device is well suited for high efficiency fast switching applications.
Product Description
The P-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
Applications
- Motor Driver Applications
- POL Applications
- Load Switch
- LED Application
Pin Configuration
LMP3335SF (SOP-8)
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP3335SF
P/N LMP3335
Rev....
