LMP3415ZF
Features
- RDS(ON) =45mΩ@VGS = -4.5V
- RDS(ON) =58mΩ@VGS = -2.5V
- RDS(ON) =85mΩ@VGS = -1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
These devices are particularly suited for low Voltage power management, such as smart Phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Product Description
LMP3415ZF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Applications
- Portable Equipment
- Battery Powered System
- Net Working System
Pin Configuration LMP3415ZF (SOT-23)
Top Views
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP3415ZF
P/N LMP3415
Rev....
