LMP4435SSF
Features
- -30V/-9A, RDS(ON)<18mΩ@VGS=-10V
- -30V/-7A, RDS(ON)<26mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- SOP-8 package design
Product Description
LMP4435SSF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Pin Configuration
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- LED Display
- CCFL Inverter
- Power Management in Notebook puter
- Load/Power Switching
LMP4435SSF (SOP-8)
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMP4435SSF...
