LMPBSS84JZF
Features
- -60V/-0.13A, RDS(ON)<10Ω@VGS=-5V
- Super high density cell design for extremely low RDS
(ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
Product Description
LMPBSS84JZF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low inline power loss are needed in mercial industrial surface mount applications.
Applications
- DC to DC Converter
- Cellular & PCMCIA Card
- Power Management in Portable and Battery etc
- Cordless Telephone
Pin Configuration
LMPBSS84JZF (SOT-23)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMPBSS84JZF LMPBSS84
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