LMPDD0903DF
Features
- -100V/-10A, RDS(ON)<140mΩ@VGS=-10V
- VGS Guaranteed ±25V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- TO-252-2L package design
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Applications
- Networking
- Load Switch
- Led applications
Pin Configuration
LMPDD0903DF (TO-252-2L)
Description
Gate
Drain
Source
Notice: The information in this document is subject to change without notice.
Ordering Information
Part Number
P/N
LMPDD0903DF LMPDD0903
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package TO-252-2L
Quantity 2500
Marking Information
Part...
