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LMPDD0903DF - 100V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -100V/-10A, RDS(ON).

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Datasheet Details

Part number LMPDD0903DF
Manufacturer LFC semi
File Size 728.61 KB
Description 100V P-Channel MOSFET
Datasheet download datasheet LMPDD0903DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMPDD0903DF Rev. 1.0 LMPDD0903DF 100V P-Channel MOSFET Features  -100V/-10A, RDS(ON)<140mΩ@VGS=-10V  VGS Guaranteed ±25V  Improved dv/dt capability  Fast switching  Green Device Available  TO-252-2L package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.