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LMPP1073TX6F - 20V P-Channel Enhancement Mode MOSFET

General Description

provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.5A, RDS(ON)=900mΩ@VGS=-4.5V.
  • -20V/-0.2A, RDS(ON)=1450mΩ@VGS=-2.5V.
  • -20V/-0.1A, RDS(ON)=2400mΩ@VGS=-1.8V.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • ESD Protection.
  • SOT-363 package design Product.

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Datasheet Details

Part number LMPP1073TX6F
Manufacturer LFC semi
File Size 663.82 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMPP1073TX6F Datasheet

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Full PDF Text Transcription (Reference)

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LMPP1073TX6F Rev. 1.0 LMPP1073TX6F 20V P-Channel Enhancement Mode MOSFET Features  -20V/-0.5A, RDS(ON)=900mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1450mΩ@VGS=-2.5V  -20V/-0.1A, RDS(ON)=2400mΩ@VGS=-1.8V  Low-Voltage Operation  High-Speed Circuits  ESD Protection  SOT-363 package design Product Description LMPP1073TX6F , P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.