LMPP1073TX6F
Features
- -20V/-0.5A, RDS(ON)=900mΩ@VGS=-4.5V
- -20V/-0.2A, RDS(ON)=1450mΩ@VGS=-2.5V
- -20V/-0.1A, RDS(ON)=2400mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- ESD Protection
- SOT-363 package design
Product Description
LMPP1073TX6F , P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones, Pagers
Pin Configuration
LMPP1073TX6F (SOP-363)
Description
Source1
Gate1
Drain2
Source2
Gate2
Drain1
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
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