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LMPP3925EX6F - 30V P-Channel Enhancement Mode MOSFET

General Description

LMPP3925EX6F, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -30V/-0.3A, RDS(ON)=2500mΩ@VGS=-4.5V RDS(ON)=2900mΩ@VGS=-2.5V RDS(ON)=5000mΩ@VGS=-1.8V.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • ESD Protection.
  • SOT-363 package design Product.

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Datasheet Details

Part number LMPP3925EX6F
Manufacturer LFC semi
File Size 836.02 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMPP3925EX6F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMPP3925EX6F Rev. 1.0 LMPP3925EX6F 30V P-Channel Enhancement Mode MOSFET Features  -30V/-0.3A, RDS(ON)=2500mΩ@VGS=-4.5V RDS(ON)=2900mΩ@VGS=-2.5V RDS(ON)=5000mΩ@VGS=-1.8V  Low-Voltage Operation  High-Speed Circuits  ESD Protection  SOT-363 package design Product Description LMPP3925EX6F, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.