LMPP3925EX6F Description
LMPP3925EX6F, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. The information in this document is subject to change without notice.
LMPP3925EX6F Key Features
- 30V/-0.3A, RDS(ON)=2500mΩ@VGS=-4.5V RDS(ON)=2900mΩ@VGS=-2.5V RDS(ON)=5000mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- ESD Protection
- SOT-363 package design