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GM72V66841CLT Datasheet 2m X 8-bit X 4 Bank Sdram

Manufacturer: LG Electronics

Overview: LG Semicon Co.,Ltd.

General Description

The GM72V66841CT/CLT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.

The GM72V66841CT/CLT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 125 Mhz.

Key Features

  • PC100,PC66 Compatible 7K(2-2-2), 7J(3-2-2), 10K(PC66).
  • 3.3V single Power supply.
  • LVTTL interface.
  • Max Clock frequency 100/125 MHz.
  • 4,096 refresh cycle per 64 ms.
  • Two kinds of refresh operation Auto refresh/ Self refresh.
  • Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP.
  • Programmable CAS latency : 2/3.
  • 4 Banks can operate independently or simultaneously.
  • Burst read/burst write or burst read/single wri.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Hynix Semiconductor Logo GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM Hynix Semiconductor
Hynix Semiconductor Logo GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM Hynix Semiconductor
Hynix Semiconductor Logo GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM Hynix Semiconductor

More Datasheets from LG Electronics

Part Number Description
GM72V66841CT 2M x 8-Bit x 4 Bank SDRAM
GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM
GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM
GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM
GM72V661641D 1M word x 16-Bit x 4 Bank SDRAM
GM72V661641DI 1M word x 16-Bit x 4 Bank SDRAM
GM72V661641DI 1M word x 16-Bit x 4 Bank SDRAM
GM72V661641DLI 1M word x 16-Bit x 4 Bank SDRAM
GM72V661641DLI 1M word x 16-Bit x 4 Bank SDRAM
GM72V66441CT-10 4M x 4-Bit x 4 Bank SDRAM

GM72V66841CLT Distributor