GM76C8128CL Datasheet | LG Electronics

Description The GM76C8128CL/CLL-W is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and operated from a single 2.7V to 5.5V supply. Advanced circuit technique provide both high speed and low power consumption. The device is placed in a low power standby mode with /CS1 high or CS2 low and the output enable (/OE) allows fast memory access. Thus it is suitable for high speed and low power applications, especially where battery back-up is required. GM76C8128CL/CLL-W 131,072 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CS2 /WE A13 A8 A9 A11 /OE A10 /CS1 I/O7 I/O6 I/O5 I/O4 I/O3 Features - Fast Speed : 55/70ns at Vcc=5V+/-10% 120/150ns at Vcc=3V+/-10% - Low Power Standby and Low Power Operation -Standby : 0.11m W Max. at Vcc=5V+/-10% 49.5u W Max. at Vcc=3V+/-10% -Operation : 385m W Max. at Vcc=5V+/-10% . 66m W Max. at Vcc=3V+/10% - pletely Static RAM : No Clock or Timing Strobe Required - Equal Access and Cycle Time - TTL patible inputs and outputs - Capability of Battery Back-up Operation - Single +2.7V ~ +5.5V Operation A0 - Standard 32 DIP, SOP and TSOP I A1 A2 Data Shee (Top View) Block Diagram Address Buffer 1024 MEMORY CELL ARRAY X 1024 x 128 x 8 Decoder (128K x 8) Pin Description Pin A0-A16 /WE /CS1, CS2 /OE I/O0-I/O7 VCC VSS NC Function Address Inputs Write Enable Input Chip Select Input Output Enable Input Data Inputs/Outputs /OE /CS1 CS2 A14 A15 A16 128 x 8 7 Y Decorder 128 Column Select /CS1, CS2 Chip Control /OE, /WE Chip Control Power Supply (2.7V~5.5V) Ground I/O Buffer /WE I/O0 I/O1 I/O2 I/O3 I/O4...