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Features
For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram
1N6263
Small Signal Schottky Diodes VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Maximum single cycle surge 10µs square w ave Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature.
1N6263 Datasheet
