1N6263 Datasheet | LGE

Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications Mechanical Data Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram Small Signal Schottky Diodes VOLTAGE RANGE: 60 V POWER DISSIPATION:400 m W - 35(GLASS) Dimensions in millimeters ABSOLUTE RATINGS(LIMITING VALUES) Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Maximum single cycle surge 10µs square w ave Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage @ IR=10 A Leakage current @ VR=50V Forw ard voltage drop @ IF=1m...