1SS196 Overview
1. N.C. 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum Ratings @TA=25℃ -55-125 Unit V V mA mA mW ℃ ℃
1SS196 Key Features
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| Part number | 1SS196 |
|---|---|
| Manufacturer | LGE |
| File Size | 222.94 KB |
| Description | Switching Diodes |
| Datasheet | 1SS196-LGE.pdf |
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1. N.C. 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum Ratings @TA=25℃ -55-125 Unit V V mA mA mW ℃ ℃
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 1SS196 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor | |
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1SS196 | SWITCHING DIODE | JCET |
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1SS196 | Surface mount switching diode | GME |
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1SS196 | SURFACE MOUNT FAST SWITCHING DIODE | WON-TOP |
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1SS196 | DIODE | WEJ |
| Part Number | Description |
|---|---|
| 1SS190 | Switching Diodes |
| 1SS193 | Switching Diodes |
| 1SS141 | Small Signal Switching Diodes |
| 1SS144 | Small Signal Switching Diodes |
| 1SS145 | Small Signal Switching Diodes |
| 1SS146 | Small Signal Switching Diodes |
| 1SS147 | Small Signal Switching Diodes |
| 1SS184 | Switching Diodes |
| 1SS187 | Switching Diodes |
| 1SS226 | Switching Diodes |