LGE 2SA1012
PNP Transistor
| Part No. | 2SA1012 |
|---|---|
| Datasheet | 2SA1012 Download |
| Manufacturer |  LGE |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
3 2 1 HIGH CURRENT SWITCHINGAPPLICATIONS
. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range -60 -50 -5 -5 2 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC =-1mA, IE=0 IC =-1mA, IB=0 IE=-100μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 -60 -50 -5 V V V -1 μA -1 μA DC current gain hFE(1) VCE=-1V,...
