• Part: 2SA1012
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: LGE
  • Size: 310.90 KB
Download 2SA1012 Datasheet PDF
LGE
2SA1012
Features 3 2 1 — HIGH CURRENT SWITCHING APPLICATIONS. — Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A — High Speed Swithing Time : tstg = 1.0us (Typ.) — plementary to 2SC2562 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range -60 -50 -5 -5 2 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC =-1m A, IE=0 IC =-1m A, IB=0 IE=-100μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 -60 -50 -5 V V V -1 μA -1 μA DC current...