LGE 2SC2551
NPN Transistor
FEATURES
High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 300 V 300 V 6V Dimensions in inches and (millimeters) IC Collector Current -Continuous 100 mA PC Collector power dissipation 400 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 300 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CEO V(BR)EBO ICBO IEBO Ic=1mA, IB=0 IE=100μA, IC=0 VCB=300V, IE=0 VEB=6V, IC=0 300 V 6V 0.1 μA 0.1 μA DC current ga