3DA4793
3DA4793 is NPN Bipolar Transistors manufactured by LGE.
Features plementary to 3CA1837 Collector Power Dissipation
PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃)
3DA4793(NPN)
TO-220F Bipolar Transistors
TO-220F
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Dimensions in inches and (millimeters)
Value
Units
VCBO VCEO VEBO IC IB TJ Tstg
ELECTRICAL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Junction Temperature Storage Temperature
CHARACTERISTICS (Tamb=25℃
230 230
5 1000 100 150 -55-150 unless otherwise specified)
V V V m A m A ℃ ℃
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=0.1m A, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1m A, IB=0
230 V
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=230V, IE=0
10 µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
10 µA
DC current gain h...
