LGE BAV99T
Switching Diode
| Part No. | BAV99T |
|---|---|
| Datasheet | BAV99T Download |
| Manufacturer |  LGE |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
Fast Switching Speed For General Purpose SwitchingAPPLICATIONS
High Conductance Dimensions in inches and (millimeters) BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JEMAXIMUM RATINGS
@TA=25℃ Parameter Reverse voltage Forward current Forward power dissipation Junction temperature Storage temperature Symbol VR IO PD Tj Tstg Limits 85 75 150 150 -65~150ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse breakdown voltage V(BR) IR= 1μA Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time IR1 VR=75V IR2 VR=25V IF=1mA VF IF=10mA IF=50mA IF=150mA CD VR=0 f=1MHz t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω MIN 85 Unit V mA mW ℃ ℃ MAX 2 0.03 715 855 1000 1250 1.5 4 UNIT V μA μA mV pF nS mail:lge@luguang.cn Typical Characteristics BAW56T/BAV70T/BAV99T Switching Diode mail:lge@luguang.cn