• Part: LGE3M40170Q
  • Description: SiC Power MOSFET
  • Category: MOSFET
  • Manufacturer: LGE
  • Size: 1.28 MB
Download LGE3M40170Q Datasheet PDF
LGE
LGE3M40170Q
Features - High Blocking Voltage with Low On-Resistance - High Speed Switching with Low Capacitance - Easy to Parallel and Simple to Drive Benefits - Higher System Efficiency - Reduced Cooling Requirements - Increased Power Density - Increased System Switching Frequency Applications - Power Supplies - High Voltage DC/DC Converters - Motor Drives - Switch Mode Power Supplies - Pulsed Power applications VDS RDS(on) ID@25℃ = 1700 V = 40mΩ = 72 A TO-247-4 Pin definition Part Number Package TO-247-4 Marking Maximum Ratings (TC=25℃ unless otherwise specified) Symbol VDSmax VGSmax VGSop Parameter Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage Continuous Drain Current ID(pulse) PD TJ, TSTG Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Value 1700 -10/+25 -5/+20 72 48 160 520 -40 to +175 Unit Test Conditions V VGS=0V, ID=100μA V Absolute maximum values V Remended operational values A VGS=20V, Tc=25℃...