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LGE3M40170Q - SiC Power MOSFET

Features

  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitance.
  • Easy to Parallel and Simple to Drive Benefits.
  • Higher System Efficiency.
  • Reduced Cooling Requirements.
  • Increased Power Density.
  • Increased System Switching Frequency.

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Datasheet preview – LGE3M40170Q

Datasheet Details

Part number LGE3M40170Q
Manufacturer LGE
File Size 1.28 MB
Description SiC Power MOSFET
Datasheet download datasheet LGE3M40170Q Datasheet
Additional preview pages of the LGE3M40170Q datasheet.

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    LGE3M40170Q SiC Power MOSFET Features  High Blocking Voltage with Low On-Resistance  High Speed Switching with Low Capacitance  Easy to Parallel and Simple to Drive Benefits  Higher System Efficiency  Reduced Cooling Requirements  Increased Power Density  Increased System Switching Frequency Applications  Power Supplies  High Voltage DC/DC Converters  Motor Drives  Switch Mode Power Supplies  Pulsed Power applications VDS RDS(on) ID@25℃ = 1700 V = 40mΩ = 72 A TO-247-4 Pin definition Part Number LGE3M40170Q Package TO-247-4 Marking LGE3M40170Q Maximum Ratings (TC=25℃ unless otherwise specified) Symbol VDSmax VGSmax VGSop Parameter Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage ID Continuous Drain Current ID(pulse) PD TJ, TSTG Pulsed Drain Current Powe
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