PH2369
PH2369 is NPN Transistor manufactured by LGE.
Features
Power dissipation
1. COLLECTOR 2. BASE 3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
15 V
VEBO
Emitter-Base Voltage
4.5 V
IC Collector Current
- Continuous 0.2
PC Collector Power Dissipation
500 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
TO-92 Transistor (NPN) TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter...
