LINEAR SYSTEMS LS313
DUAL NPN TRANSISTORS
FEATURES
VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mAABSOLUTE MAXIMUM RATINGS
NOTE 1 @ 25°C (unless otherwise noted) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature -55° to +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Top View Top View SOT-23 6 LEADS TO-71 & TO-78ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS BVCBO BVCEO BVEBO BVCCO hFE hFE hFE VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector to Base Voltage 25 45 Collector to Emitter Voltage 25 45 Emitter-Base Breakdown Voltage 6.0 6.0 Collector to Collector Voltage 45 45 DC Current Gain 150 150 DC Current Gain 150 150 DC Current Gain 150 150 Collector Saturation Voltage 0.25 0.25 Collector...