LINEAR SYSTEMS LS350
MONOLITHIC DUAL PNP TRANSISTOR
| Part No. | LS350 |
|---|---|
| Datasheet | LS350 Download |
| Manufacturer |  LINEAR SYSTEMS |
| Description | MONOLITHIC DUAL PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
HIGH GAIN TIGHT VBE MATCHING hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mAABSOLUTE MAXIMUM RATINGS
NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Top View Top View SOT-23 6 LEADS TO-71 & TO-78ELECTRICAL CHARACTERISTICS
@ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS350 LS351 LS352 UNITS BVCBO BVCEO BVEBO BVCCO hFE Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Collector Voltage DC Current Gain 25 45 60 MIN. V 25 45 60 MIN. V 6.0 6.0 6.0 MIN. V ±25 ±45 ±80 MIN. V 100 150 200 MIN. 600 600 MAX. hFE DC Current Gain 100 150 200 MIN. 600 600 MAX. hFE VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 fT NF DC Current Gain Collec...