LS350 - MONOLITHIC DUAL PNP TRANSISTOR

Features

HIGH GAIN TIGHT VBE.

LINEAR SYSTEMS

Datasheet Details

Part number	LS350
Manufacturer	Linear SYSTEMS
File Size	170.53 KB
Description	MONOLITHIC DUAL PNP TRANSISTOR
Datasheet	LS350 Datasheet
Additional preview pages of the LS350 datasheet.

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Full PDF Text Transcription

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FEATURES HIGH GAIN TIGHT VBE MATCHING hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.

Published: Dec 31, 2024 |