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LS352 - MONOLITHIC DUAL PNP TRANSISTOR

Download the LS352 datasheet PDF. This datasheet also covers the LS350 variant, as both devices belong to the same monolithic dual pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • HIGH GAIN TIGHT VBE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LS350-LINEARSYSTEMS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LS352
Manufacturer LINEAR SYSTEMS
File Size 170.53 KB
Description MONOLITHIC DUAL PNP TRANSISTOR
Datasheet download datasheet LS352 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FEATURES HIGH GAIN TIGHT VBE MATCHING hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.