LS352 - MONOLITHIC DUAL PNP TRANSISTOR

This page provides the datasheet information for the LS352, a member of the LS350 MONOLITHIC DUAL PNP TRANSISTOR family.

Features

HIGH GAIN TIGHT VBE.

LINEAR SYSTEMS

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Datasheet Details

Part number	LS352
Manufacturer	Linear SYSTEMS
File Size	170.53 KB
Description	MONOLITHIC DUAL PNP TRANSISTOR
Datasheet	LS352 Datasheet
Additional preview pages of the LS352 datasheet.

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Full PDF Text Transcription

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FEATURES HIGH GAIN TIGHT VBE MATCHING hFE 200 @ 10µA - 1mA IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature +150°C Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.

Published: Dec 31, 2024 |