LINEAR SYSTEMS LS5907
DUAL N-CHANNEL JFET AMPLIFIER
| Part No. | LS5907 |
|---|---|
| Datasheet | LS5907 Download |
| Manufacturer |  LINEAR SYSTEMS |
| Description | DUAL N-CHANNEL JFET AMPLIFIER |
| Buy | Stock & Price |
FEATURES
LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 40V -IG(f) Gate Forward Current 10mA -IG Gate Reverse Current Maximum Power Dissipation Device Dissipation @ TA=25ºC - Total 10µA 500mW2 LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER Case & Body Top View SOIC Top View TO-78ELECTRICAL CHARACTERISTICS
@ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC LS5906 LS5907 LS5908 LS5909 LS5905 UNITS │∆VGS1-2/∆T│max. Drift vs. Temperature 5 10 20 40 40 µV/ºC │VGS1-2│max. Offset Voltage 5 -IG Max Operating 1 -IG Max High Temperature 1 -IGSS Max Gate Reverse Current 2 -IGSS Max Gate Reverse Current 5 5 10 15 15 mV 1 1 1 3 pA 1 1 1 3 nA 2 2 2 5 pA 5 5 5 10...