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10T200CT - 10A 200V Trench Schottky Diode

Key Features

  • s.
  • Schottky Barrier Chip.
  • Guard Ring Die Construction for Transient Protection.
  • Low Power Loss,High Effciency.
  • High Surge Capability.
  • High Current Capability and Low Forward Voltage Drop.
  • Halogen Free and RoHS Compliant 10T200CT 10A 200V Trench Schottky Diode.
  • Product Summary VRRM IF@Tj=25℃ VF ,TYP@5A,Tj=25℃ VF ,TYP@5A,Tj=125℃ IR,MAX@Tj=25℃ 200 V 10 A 0.76 V 0.65 V 0.05 mA TO-220 TO-220F 1、ANODE 2、.

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Datasheet Details

Part number 10T200CT
Manufacturer LIPTAI
File Size 257.15 KB
Description 10A 200V Trench Schottky Diode
Datasheet download datasheet 10T200CT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LIPTAI ■ Applications Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications • AC-DC Adaptors • DC-DC Converters ■ Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss,High Effciency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Halogen Free and RoHS Compliant 10T200CT 10A 200V Trench Schottky Diode ■ Product Summary VRRM IF@Tj=25℃ VF ,TYP@5A,Tj=25℃ VF ,TYP@5A,Tj=125℃ IR,MAX@Tj=25℃ 200 V 10 A 0.76 V 0.65 V 0.05 mA TO-220 TO-220F 1、ANODE 2、CATHODE 3、ANODE Marking MC10T200CT MF10T200CT Package TO-220 TO-220F Packaging Tube Tube Min. package quantity 1000 1000 Si Chuan LIPTAI Electronic Co.,Ltd 1 MC-Power Semiconductor Co.,Ltd www.