ML3S10C120
Features
- No Reverse Recovery/ No Forward Recovery
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient on VF
- Fast Reverse Recovery
- High Surge Current Capability
- 100% UIS and RG Tested
10A 1200V Si C Schottky Diode
- Product Summary
VRRM IF@Tc=160℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃
Qc
52 n C
- Benefits
- Higher System Efficiency
- System Cost and Size Savings
- High Frequency Operation
- Higher System Reliability
- Reduced EMI
TO-263
Cathde ：1 Anode ：2
Marking ML3S10C120 ML3S10C120
Package TO-263 TO-263
Packaging Tube
Tape & Reel
Min. package quantity 1000 800
Si Chuan LIPTAI Electronic Co.,Ltd
MC-Power Semiconductor Co.,Ltd
.mcpower-semi.
2021.10 Rev.1.0
LIPTAI
- Absolute Maximum Ratings（Tc=25℃ unless otherwise noted)
Parameter
Symbol
Ratings
Peak Repetitive Reverse Voltage
VRRM
Surge Peak Reverse...
