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ML3S10C120 - 10A 1200V SiC Schottky Diode

Features

  • s.
  • No Reverse Recovery/ No Forward Recovery.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient on VF.
  • Fast Reverse Recovery.
  • High Surge Current Capability.
  • 100% UIS and RG Tested ML3S10C120 10A 1200V SiC Schottky Diode.
  • Product Summary VRRM IF@Tc=160℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃ 1200 V 10 A 1.41 V 2.0 V Qc 52 nC.
  • Benefits.
  • Higher System Efficiency.
  • System Cost and Size.

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Datasheet Details

Part number ML3S10C120
Manufacturer LIPTAI
File Size 220.14 KB
Description 10A 1200V SiC Schottky Diode
Datasheet download datasheet ML3S10C120 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LIPTAI ■ Applications • Switch Mode Power Supply • Power Factor Correction • Solar Inverter • Uninterruptible Power Supply ■ Features • No Reverse Recovery/ No Forward Recovery • Temperature Independent Switching Behavior • Positive Temperature Coefficient on VF • Fast Reverse Recovery • High Surge Current Capability • 100% UIS and RG Tested ML3S10C120 10A 1200V SiC Schottky Diode ■ Product Summary VRRM IF@Tc=160℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃ 1200 V 10 A 1.41 V 2.0 V Qc 52 nC ■ Benefits • Higher System Efficiency • System Cost and Size Savings • High Frequency Operation • Higher System Reliability • Reduced EMI TO-263 Cathde :1 Anode :2 Marking ML3S10C120 ML3S10C120 Package TO-263 TO-263 Packaging Tube Tape & Reel Min.
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