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LTE-4238 - (LTE-x238x) LAMP

Download the LTE-4238 datasheet PDF. This datasheet also covers the LTE-5238A_LITE variant, as both devices belong to the same (lte-x238x) lamp family and are provided as variant models within a single manufacturer datasheet.

General Description

The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.

Key Features

  • Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LTE-5238A_LITE-ONElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LTE-4238
Manufacturer LITE-ON Electronics
File Size 486.92 KB
Description (LTE-x238x) LAMP
Datasheet download datasheet LTE-4238 Datasheet

📁 Similar Datasheet

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LTE-4208C GaAs T-1 3/4 Standard Infrared Emitting Diode Lite-On Technology Corporation
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Other Datasheets by LITE-ON Electronics

Part Number Description
LTE-4238C (LTE-x238x) LAMP
LTE-5208A LAMP
LTE-5228A IR Emitter and Detector
LTE-5228AB LED Lamp
LTE-5238A (LTE-x238x) LAMP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC Features Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C Description The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of silicon phototransistor. ee DataSh DataSheet4U.