GPF5N10 - N-Channel 100V Enhancement Mode Power MOSFET

This page provides the datasheet information for the GPF5N10, a member of the GPF5N10-LITE N-Channel 100V Enhancement Mode Power MOSFET family.

Description

GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics.

This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification application.

Features

Low RDS(ON) & FOM.
Extremely low switching loss.
Excellent stability and uniformity.
Easy to drive.
Marking: GPF5N10.
Qualified according to AEC-Q101.
Weight: 2070mg.
RoHS Compliant GPF5N10 BVDSS=100V RDS(ON) ≦5mΩ@VGS=10V ID,pulse= 390A D:Drain G:Gate S:Source (ITO-220AB) Top View.

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Datasheet Details

Part number	GPF5N10
Manufacturer	LITEON
File Size	427.50 KB
Description	N-Channel 100V Enhancement Mode Power MOSFET
Datasheet	GPF5N10 Datasheet
Additional preview pages of the GPF5N10 datasheet.

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N-Channel 100V Enhancement Mode Power MOSFET General Description GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification application.

Published: Mar 22, 2019 |