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LTP22P06 - P-Channel 60V Trench MOSFET

Download the LTP22P06 datasheet PDF (LTP22P06-LITE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p-channel 60v trench mosfet.

Description

The LTP22P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Marking: LTP22P06.
  • Qualified to MIL-STD-750E.
  • Weight: 1.9g.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LTP22P06-LITE-ON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LTP22P06
Manufacturer LITEON
File Size 540.12 KB
Description P-Channel 60V Trench MOSFET
Datasheet download datasheet LTP22P06 Datasheet

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Full PDF Text Transcription

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P-Channel 60V Trench MOSFET General Description The LTP22P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Features • Super high density cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability • Marking: LTP22P06 • Qualified to MIL-STD-750E • Weight: 1.9g • RoHS Compliant Application • Power Management in Notebook • Load Switch • DC/DC Converter LTP22P06 BVDSS=-60V , RDS(ON) ≦75mΩ@VGS=-10V RDS(ON) ≦100mΩ@VGS=-4.
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