LTP22P06 Description
The LTP22P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
LTP22P06 Key Features
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Marking: LTP22P06
- Qualified to MIL-STD-750E
- Weight: 1.9g
- RoHS pliant
- Power Management in Notebook
- Load Switch
- DC/DC Converter