S4M02-600F - Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors

This page provides the datasheet information for the S4M02-600F, a member of the S4M02-600F-LITE Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors family.

Datasheet Summary

Features

Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability S4M02-600F SCRs 4.

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Datasheet Details

Part number	S4M02-600F
Manufacturer	LITEON
File Size	185.24 KB
Description	Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Datasheet	S4M02-600F Datasheet
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LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability S4M02-600F SCRs 4 AMPERES RMS 600 VOLTS TO-126 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed) Rating Peak Repetitive Off– State Voltage (TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open) Symbol Value Unit VDRM, VRRM 600 Volts On-State RMS Current (TC = 80℃) 180° Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25℃) Circuit Fusing Consideration (t = 8.

Published: Feb 26, 2018 |