T4M10T-B Overview
LITE-ON SEMICONDUCTOR T4M10T-B SERIES Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 4 AMPERES RMS 600 VOLTS.
T4M10T-B Key Features
- 50 V/us Minimum at 125℃ mutating di/dt
- 3.0 A/ms Minimum at 125℃ Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design On-State Current Rat
- 40 Amperes Blocking Voltage to 800 Volts Rugged, Economical TO220AB Package Operational in Three Quadrants: Q1, Q2, and