TB1300M Datasheet | LITEON

LITE-ON SEMICONDUCTOR TB0640M thru TB4000M SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Bi-Directional VDRM - 58 to 360 Volts IPP - 80 Amperes Features Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A @8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams A DIM. MIN. MAX. A 4.06 4.57 B 3.30 3.94 BC C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 G F 0.05 0.20 H FD E G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range THERMAL RESISTANCE SYMBOL IPP ITSM TJ TSTG CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on remended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL Rth(J-L) Rth(J-A) △VBR/△TJ MAXIMUM RATED SURGE...