LSD60R092GF
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max RDS(on),max
650V 0.092Ω
IDM 120A
Qg,typ
66n C
Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 66n C)
- 100% UIS tested
- Ro HS pliant
Applications
- Power faction correction (PFC).
- Switched mode power supplies (SMPS).
- Uninterruptible power supply (UPS).
TO-247
TO-220MF D
TO-263
S N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage Avalanche energy, single pulse 2)
Power Dissipation TO-247 ( TC = 25°C )
- Derate above...
