LSD65R380GF
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.38Ω
18A
Qg,typ
21n C
Pin Configuration
Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 21n C)
- 100% UIS tested
- Ro HS pliant
Applications
- Power factor correction (PFC).
- Switched mode power supplies (SMPS).
- Uninterruptible power supply (UPS).
TO-220F
Pb
S N-Channel MOSFET
Absolute Maximum Ratings
Parameter Drain-Source Voltage
Continuous drain current
Pulsed drain current 2) Gate-Source voltage
( TC = 25°C ) ( TC = 100°C )
Avalanche energy, single pulse 3)
Power Dissipation Operating and Storage Temperature Range
Continuous diode forward current Diode pulse current
Symbol VDSS ID
IDM VGSS EAS PD TJ, TSTG IS IS,pulse
Value 650 6 3.8 18 ±30...
