LSD65R380GF Overview
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.38Ω IDM 18A Qg,typ 21nC.
LSD65R380GF Key Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 21nC)
- 100% UIS tested
- RoHS pliant