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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–88
• Pb−Free Package is Available.
L2N7002DW1T1G/T3G
MAXIMUM RATINGS
Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Symbol VDSS VDGR ID ID IDM Value 60 60 ± 115 ± 75 ± 800 Unit Vdc Vdc mAdc 3 2 1
VGS VGSM
± 20 ± 40
Vdc Vpk
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW 4 5 6
3.
L2N7002DW1T3G Datasheet
