Datasheet4U Logo Datasheet4U.com

L8050 - TO-92 Plastic-Encapsulate Transistors

Key Features

  • Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJˈTstg: -55ć to +150ć ˄ ć.

📥 Download Datasheet

Datasheet Details

Part number L8050
Manufacturer LRC
File Size 197.68 KB
Description TO-92 Plastic-Encapsulate Transistors
Datasheet download datasheet L8050 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8050 TRANSISTOR˄ NPN˅ FEATURES Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJˈTstg: -55ć to +150ć ˄ ćELECTRICAL CHARACTERISTICS Tamb=25 unless üTO 92 1.EMITTER 2.BASE 3. COLLECTOR 123 ˅otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 ­A ˈ IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100 ­Aˈ IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ­A Collector cut-off current ICEO VCE= 20 V , IB=0 0.