LDTA143ZET1G
LDTA143ZET1G is Bias Resistor Transistor manufactured by LRC.
- Part of the LDTA114EET1G comparator family.
- Part of the LDTA114EET1G comparator family.
LESHAN RADIO PANY, LTD.
Bias Resistor Transistors LDTA114EET1G Series
PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual ponents by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications.
- Simplifies Circuit Design
- Reduces Board Space
- Reduces ponent Count
- The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
- We declare that the material of product pliance with Ro HS requirements.
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS
Rating
VCBO VCEO
50 Vdc 50 Vdc 100 m Adc
Symbol Value Unit
Total Device Dissipation, FR- 4 Board (Note 1) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction- to- Ambient (Note 1)
PD Rq JA
200 m W 1.6 m W/°C
600 °C/W
Total Device Dissipation, FR- 4 Board (Note 2) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction- to- Ambient (Note 2)
PD Rq JA
300 m W 2.4 m W/°C
400 °C/W
Junction and Storage Temperature...
