LDTB114EET1G Overview
Key Features
- Only the on / off conditions need to be set for operation, making the device design easy
- 50 -40 to +10
- 56 Input resistance R1 7 Resistance ratio Transition frequency ∗ Characteristics of built-in transistor R2/R1 fT ∗ 0.8 - Typ
- 10 1 200 Max. -0.5
- 0.3 -0.88 -0.5
- 13 1.2 - Unit V V mA µA
- MHz Conditions VCC= -5V, IO= -100µA VO= -0.3V, IO= -10mA IO/II= -50mA/-2.5mA VI= -5V VCC= -50V, VI=0V VO= -5V, IO= -50mA
- VCE= -10V, IE=50mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTB114EET1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V)
- 100 VO= -0.3V -50
