Datasheet Summary
LESHAN RADIO PANY, LTD.
20V Dual N-Channel Enhancement-Mode MOSFET
VDS= 20V RDS(ON), Vgs@4.5V, Ids@4A = 28 m RDS(ON), Vgs@2.5V, Ids@2A = 40 m Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications we declare that the material of product pliance with RoHS requirements.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount...