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LNTK3043PT5G - Power MOSFET

Key Features

  • Enables High Density PCB Manufacturing.
  • 44% Smaller Footprint than SC.
  • 89 and 38% Thinner than SC.
  • 89.
  • Low Voltage Drive Makes this Device Ideal for Portable Equipment.
  • Low Threshold Levels, VGS(TH) < 1.3 V.
  • Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics.
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic T.

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Datasheet Details

Part number LNTK3043PT5G
Manufacturer LRC
File Size 223.27 KB
Description Power MOSFET
Datasheet download datasheet LNTK3043PT5G Datasheet

Full PDF Text Transcription for LNTK3043PT5G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LNTK3043PT5G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 285 mA, P−Channel with ESD Protection, SOT−723 Features • Enables High Density PCB Manufacturing • 44% Smaller Footprint tha...

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s • Enables High Density PCB Manufacturing • 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH) < 1.3 V • Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology • These are Pb−Free Devices • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.