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LP4101LT3G - 20V P-Channel MOSFET

Download the LP4101LT3G datasheet PDF. This datasheet also covers the LP4101LT1G variant, as both devices belong to the same 20v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LP4101LT1G-LRC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LP4101LT3G
Manufacturer LRC
File Size 656.86 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet LP4101LT3G Datasheet

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Part Number Description
LP4101LT1G 20V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.