LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET

LRC

Key Features

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other.

LSI1013XT1G p-channel 1.8-v (g-s) mosfet by LRC - Datasheet Preview

Datasheet Details

Part number	LSI1013XT1G
Manufacturer	LRC
File Size	356.21 KB
Description	P-Channel 1.8-V (G-S) MOSFET
Datasheet	LSI1013XT1G Datasheet

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P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.