S-L2N7002FDW1T1G Key Features
- RDS(ON) ≦8Ω@VGS=4V
- RDS(ON) ≦13Ω@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
- ESD Protected:1000V
| Part Number | Description |
|---|---|
| S-L2N7002FWT1G | Small Signal MOSFET |
| S-L2N7002DMT1G | Small Signal MOSFET |
| S-L2N7002DW1T1G | Small Signal MOSFET |
| S-L2N7002EM3T5G | Small Signal MOSFET |
| S-L2N7002KDW1T1G | Small Signal MOSFET |