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S-LN2302ALT1G - 20V N-Channel Enhancement-Mode MOSFET

Key Features

  • RDS(ON)≦85mΩ@VGS=4.5V.
  • RDS(ON)≦115mΩ@VGS=2.5V.
  • RDS(ON)≦135mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LN2302ALT1G
Manufacturer LRC
File Size 302.62 KB
Description 20V N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet S-LN2302ALT1G Datasheet

Full PDF Text Transcription for S-LN2302ALT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LN2302ALT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density c...

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RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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