S-LN2302ALT1G
Key Features
- RDS(ON)≦85mΩ@VGS=4.5V
- RDS(ON)≦115mΩ@VGS=2.5V
- RDS(ON)≦135mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Applications
- Power Management in Notebook
