Full PDF Text Transcription for S-LN2308LT1G (Reference)
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LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.3V ● Super high densit...
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RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.3V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-LN2308LT1G Datasheet
