Datasheet4U Logo Datasheet4U.com

S-LN4812LT1G - N-Channel Enhancement-Mode MOSFET

Datasheet Summary

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other.

📥 Download Datasheet

Datasheet preview – S-LN4812LT1G

Datasheet Details

Part number S-LN4812LT1G
Manufacturer LRC
File Size 279.56 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet S-LN4812LT1G Datasheet
Additional preview pages of the S-LN4812LT1G datasheet.

📁 Similar Datasheet

  • S-L1SS400CST5G - Switching diode (Leshan Radio Company)
  • S-L1SS400T1G - Switching Diode (Leshan Radio Company)
  • S-L2980 - CMOS VOLTAGE REGULATOR (ABLIC)
  • S-L2980 - High Ripple Rejection Low Dropout CMOS Voltage Regulator (Seiko Instruments)
  • S-L2985 - High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator (Seiko Instruments)
  • S-L2N7002LT1G - Small Signal MOSFET (Leshan Radio Company)
  • S-L2SA1365ELT1G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365ELT3G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365FLT1G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365FLT3G - General Purpose Transistor (Leshan Radio Company)
Other Datasheets by LRC

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Published: |