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S-LNST3906F3T5G - PNP General Purpose Transistor

Key Features

  • hFE, 100.
  • 300.
  • Low VCE(sat), ≤ 0.4 V.
  • Reduces Board Space.
  • This is a Pb.
  • Free Device.
  • S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LNST3906F3T5G
Manufacturer LRC
File Size 381.25 KB
Description PNP General Purpose Transistor
Datasheet download datasheet S-LNST3906F3T5G Datasheet

Full PDF Text Transcription for S-LNST3906F3T5G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LNST3906F3T5G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. PNP General Purpose Transistor TheLNST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is d...

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ur popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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